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| RSS060P05 Transistor 4V Drive Pch MOS FET RSS060P05 Structure Silicon P-channel MOS FET External dimensions (Unit : mm) SOP8 5.0 0.4 (8) (5) 1.75 Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). 1pin mark (1) (4) 3.9 6.0 1.27 0.2 Applications Power switching , DC / DC converter , Inverter Each lead has same dimensions Packaging dimensions Package Type RSS060P05 Code Basic ordering unit (pieces) Taping TB 2500 Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol Limits VDSS -45 VGSS 20 ID 6.0 IDP *1 24 IS -1.6 ISP *1 -24 PD *2 2 Tch 150 Tstg -55 to +150 Unit V V A A A A W o Equivalent circuit (8) (7) (6) (5) 2 1 (1) Source (2) Source (3) Source (4) Gate (5) Drain (6 )Drain (7) Drain (8) Drain Total power dissipation Chanel temperature Range of Storage temperature *1 PW10Duty cycle1% *2 Mounted on a ceramic board (1) (2) (3) (4) C o C 1 ESD PROTECTION DIODE 2 BODY DIODE Thermal resistance Parameter Chanel to ambient * Mounted on a ceramic board Symbol Rth(ch-a) * Limits 62.5 Unit o C/W 0.4Min. 1/4 RSS060P05 Transistor Electrical characteristics (Ta=25C) Parameter Symbol Min. Gate-source leakage IGSS - Drain-source breakdown voltage V(BR) DSS -45 Zero gate voltage drain current - IDSS Gate threshold voltage VGS (th) -1.0 - Static drain-source on-state - RDS (on) resistance - Forward transfer admittance Yfs 8.0 - Input capacitance Ciss Output capacitance - Coss - Reverse transfer capacitance Crss - Turn-on delay time td (on) - Rise time tr - Turn-off delay time td (off) - Fall time tf - Total gate charge Qg - Gate-source charge Qgs - Gate-drain charge Qgd Pulsed Typ. - - - - 26 35 38 - 2700 360 230 25 28 100 28 23.0 6.6 8.0 Max. 10 - -1 -2.5 36 49 53 - - - - - - - - 32.2 - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID= -1mA, VGS=0V VDS= -45V, VGS=0V VDS= -10V, ID= -1mA ID= -6A, VGS= -10V ID= -6A, VGS= -4.5V ID= -6A, VGS= -4.0V VDS= -10V, ID= -6A VDS= -10V VGS=0V f=1MHz VDD -25V ID= -3.0A VGS= -10V RL=-8.3 RG=10 VDD -25V VGS= -5V ID= -6.0A RL=4.2 RG=10 Body diode characteristics (Source-Drain) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. -1.2 Unit V Conditions IS= -6A, VGS=0V 2/4 RSS060P05 Transistor Electrical characteristic curves 10 VDS= -10V pulsed 1000 VGS= -10V pulsed 1000 Static Drain-Source On-State Resistance RDS(on) [m] Ta=125oC 75oC 25oC -25oC VGS= -4.5V pulsed Ta=125oC 75oC 25oC -25oC Drain Currnt : -ID [A] 1 Ta=125oC 75oC 25oC -25oC Static Drain-Source On-State Resistance RDS(on) [m] 100 100 0.1 10 10 0.01 1.0 1.5 2.0 2.5 3.0 3.5 1 0.01 1 0.1 1 10 0.01 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] Gate-Source Voltage : -VGS [V] Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (1) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (2) 1000 Static Drain-Source On-State Resistance RDS(on) [m] Static Drain-Source On-State Resistance RDS(on) [m] VGS= -4V pulsed Ta=125oC 75oC 25oC -25oC 200 Ta=25oC pulsed 10 VGS=0V pulsed 100 Source Current : -Is [A] 150 1 100 ID= -6.0A Ta=125oC 75oC 25oC -25oC 10 0.1 50 ID= -3.0A 1 0.01 0.1 1 10 0 0 5 10 15 Gate-Source Voltage : -VGS [V] Drain Current : -ID [A] 0.01 0.0 0.5 1.0 1.5 Source-Drain Voltage : -VSD [V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (3) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source-Current vs. Source-Drain Voltage 10000 Ciss 10000 Ta=25oC VDD= -25V VGS= -10V RG=10 Pulsed 10 Gate-Source Voltage : -VGS [V] 1000 Coss Switching Time : t [ns] Capacitance : C [pF] 1000 8 6 4 2 0 Ta=25oC VDD= -25V ID= -6.0A RG=10 Pulsed tf 100 td(off) td(on) 100 Ta=25oC f=1MHz VGS=0V Crss 10 tr 10 0.1 1 10 100 Drain-Source Voltage : -VDS [V] 1 0.01 0.1 1 10 Drain Current : -ID [A] 0 15 30 45 Total Gate Charge : Qg [nC] Fig.7 Typical capacitance vs. Source-Drain Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 3/4 RSS060P05 Transistor Measurement circuits VGS ID RL D.U.T. RG VDD VDS VGS 10% 90% 90% 90% 10% td(off) toff tr VDS 10% td(on) ton tr Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms VG VGS ID RL IG (Const.) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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